- Collection:
- Atlanta University and Clark Atlanta University Theses and Dissertations
- Title:
- Characterization of dopant passivation by atomic hydrogen in indium phosphide (100), 2004
- Creator:
- Henderson, Walter E.
- Date of Original:
- 2004-05-01
- Subject:
- Degrees, Academic
Dissertations, Academic - Location:
- United States, Georgia, Fulton County, Atlanta, 33.749, -84.38798
- Medium:
- theses
- Type:
- Text
- Format:
- application/pdf
- Description:
- The interaction of atomic hydrogen with several common dopants in single-crystal(iOO)-oriented InP has been investigated. Atomic hydrogen effectively neutralizes the charge carrier contribution of dopants in semiconductors by forming hydrogen-dopant complexes. Separate chambers were used to expose InP wafers to an atomic hydrogen flux and to anneal the wafers with both processes occurring under DC bias and/or elevated sample temperature. The depth and degree of passivation effects were imaged by capacitance-voltage etch profiling. The hydrogen-dopant bond activation energy was determined by measuring the change in carrier concentration after the samples were bias annealed, then fitting the resulting data to an Arrhenius plot. The activation energies were discovered to be 1.14 � 0.45 eV and 1.33 � 0.20 eV for Zn-H and Cd-H, respectively. A weak correlation between the activation energy and the electronegativity of the p-type dopant was found.
- External Identifiers:
- Metadata URL:
- http://hdl.handle.net/20.500.12322/cau.td:2004_hendersoniii_walter_e.pdf
- Rights Holder:
- Clark Atlanta University
- Holding Institution:
- Atlanta University Center Robert W. Woodruff Library
- Rights:
-
