Adsorption of elemental S and Cs on si (100) 2x1 surfaces, 1995

Collection:
Atlanta University and Clark Atlanta University Theses and Dissertations
Title:
Adsorption of elemental S and Cs on si (100) 2x1 surfaces, 1995
Creator:
Papageorgopoulos, Aristomenis
Date of Original:
1995-06-01
Subject:
Degrees, Academic
Dissertations, Academic
Location:
United States, Georgia, Fulton County, Atlanta, 33.749, -84.38798
Medium:
dissertations
theses
Type:
Text
Format:
application/pdf
Description:
Degree Type: thesis
Degree Name: Master of Science (MS)
Date of Degree: 1995
Granting Institution: Clark Atlanta University
Department/ School: Physics
This study examined the adsorption of elemental S onclean Si(lOO) surfaces and Cs on s- covered Si(lOO) surfaces. The study was performed in an UHV system using LEED, AES and WF measurements. The objective was the protection of the\ surface against degradation. The s adsorption process may be enhanced by the addition of Cs. Results indicate that S adsortion forms: a hemisulfide, (~0.5 ML) with a (2xl) structure and a monosulfide, (~1 ML) with a (lxl) structure. Adsorption of Cs on clean Si(100)2xl reduces the WF to a minimum value with a subsequent increase towards the value of metallic Cs. Preadsorption of Son Si(100)2xl lowers the WF to a final plateau without the increase. The presence of S increases the binding energy and the maximum amount of Cs that can be deposited on the Si(lOO) surface. Structural models for S and Cs on Si(lOO) surfaces have been given in the text.
Metadata URL:
http://hdl.handle.net/20.500.12322/cau.td:1995_papageorgopoulos_aristomenis
Language:
eng
Holding Institution:
Clark Atlanta University
Rights:
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