Tunable Bands in Biased Multilayer Epitaxial Graphene

Collection:
Clark Atlanta University Faculty Publications
Title:
Tunable Bands in Biased Multilayer Epitaxial Graphene
Creator:
Williams, Michael D
Samarakoon, Duminda K.
Hess, Dennis W.
Wang, Xiao-Qian
Date of Original:
2012-02-28
Subject:
African Americans--Education (Higher)--Georgia
Clark Atlanta University
Location:
United States, Georgia, Fulton County, Atlanta, 33.749, -84.38798
Medium:
articles
Type:
Text
Format:
application/pdf
Description:
Abstract: We have studied the electronic characteristics of multilayer epitaxial graphene under a perpendicularly applied electric bias. Ultraviolet photoemission spectroscopy measurements reveal that there is notable variation of the electronic density-of-states in valence bands near the Fermi level. Evolution of the electronic structure of graphite and rotational-stacked multilayer epitaxial graphene as a function of the applied electric bias is investigated using first-principles density-functional theory including interlayer van der Waals interactions. The experimental and theoretical results demonstrate that the tailoring of electronic band structure correlates with the interlayer coupling tuned by the applied bias. The implications of controllable electronic structure of rotationally fault-stacked epitaxial graphene grown on the C-face of SiC for future device applications are discussed.
Source: Nanoscale, 2012, 4, 2962
DOI: 10.1039/c2nr11991a
Metadata URL:
http://hdl.handle.net/20.500.12322/cau.ir:2012_william_md
Language:
eng
Original Collection:
Clark Atlanta University Faculty Publications
Holding Institution:
Clark Atlanta University
Rights:

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